基于湿法表面活化处理的InP/SOI晶片键合技术

Study of InP/SOI Wafer Bonding Based on Wet Surface Activation Treatment

为了实现集成硅基光源,研究了基于湿法表面处理的InP/SOI直接键合技术。采用稀释的HF溶液对InP晶片进行表面活化处理,同时采用Piranha溶液对SOI晶片进行表面活化处理,实现了二者的低温直接键合。分别采用刀片嵌入法和划痕测试仪对样品的键合强度进行了定性及定量分析。同时,采用超声波扫描显微镜及扫描电子显微镜对键合界面的缺陷信息及键合截面的微观特性进行了评估。分析结果表明:提出的键合工艺可以获得较好的键合效果。

Direct InP/SOI wafer bonding based on wet surface treatment was investigated to realize Si-based lasers.In this study,diluted HF solution was used to activate the InP wafer surface,while Piranha solution was adopted for SOI wafer,thus enabling low-temperature direct wafer bonding between InP and SOI.Crack-open method and scratch tester were employed to analyze the bonding strength of the bonded samples.In addition,scanning acoustic microscope and scanning electron microscope were also used to evaluate the defects at the bonding interface and the cross-section of the bonded samples.The measurement results show that the proposed method can achieve satisfactory bonding results.