摘要
ESD保护电路是保证集成电路可靠性的重要电路之一。具有较大芯片面积和较多电源域的集成电路给全芯片ESD保护电路的设计带来挑战。基于0.6μm CMOS工艺,设计了一种全芯片ESD保护电路,应用于5个电源域的16通道16位D/A转换器中。该D/A转换器的抗ESD能力大于2 000V,芯片尺寸为9mm×9mm。
ESD protection circuit is a significant peripheral circuit to ensure the reliability of integrated circuits.A full chip ESD protection design of CMOS chips with large chip area and multiple power domains is a difficult point in ESD protection design.An optimized full chip ESD protection circuit was designed in a 0.6μm CMOS process for a 16 channel 16 bit D/A converter with 5 power domains.The final experimental results showed that the ESD capacity of the optimized circuit was larger than HBM 2 000 V.The layout area was 9 mm×9 mm.
出处
《微电子学》
CAS
CSCD
北大核心
2018年第1期58-61,共4页
Microelectronics