摘要
Al doped ZnO（AZO） films deposited on glass substrates through the atomic layer deposition（ALD）technique are investigated with various temperatures from 100 to 250 °C and different Zn ： Al cycle ratios from20 ： 0 to 20 ： 3. Surface morphology, structure, optical and electrical properties of obtained AZO films are studied in detail. The Al composition of the AZO films is varied by controlling the ratio of Zn ： Al. We achieve an excellent AZO thin film with a resistivity of 2.14 × 10^（-3）Ω·cm and high optical transmittance deposited at 150 °C with20 ： 2 Zn ： Al cycle ratio. This kind of AZO thin films exhibit great potential for optoelectronics device application.
Al doped ZnO（AZO） films deposited on glass substrates through the atomic layer deposition（ALD）technique are investigated with various temperatures from 100 to 250 °C and different Zn ： Al cycle ratios from20 ： 0 to 20 ： 3. Surface morphology, structure, optical and electrical properties of obtained AZO films are studied in detail. The Al composition of the AZO films is varied by controlling the ratio of Zn ： Al. We achieve an excellent AZO thin film with a resistivity of 2.14 × 10^（-3）Ω·cm and high optical transmittance deposited at 150 °C with20 ： 2 Zn ： Al cycle ratio. This kind of AZO thin films exhibit great potential for optoelectronics device application.
基金
Project supported by the State Key Development Program for Basic Research of China(Nos.2011CBA00706,2011CBA00707)
the Tianjin Applied Basic Research Project and Cutting-Edge Technology Research Plan(No.13JCZDJC26900)
