δ-掺杂磁垒纳米结构中的GMR效应及调控

Delta-doping-controllable magnetoresistance device in a magnetically modulated semiconductor nanostructure

通过在半导体异质结上的上下表面沉积两条平行的铁磁条带可获得一个巨磁阻器件.为了更好地调控其性能,我们从理论上研究了在该器件中加入δ势后,该器件的透射系数、电导和磁阻比率的变化情况.研究发现,加入δ势后,该器件同样具有明显的巨磁阻效应,且其磁阻比率与加入δ势的权重和位置密切相关.因此,我们可以通过改变加入δ势的权重和位置来调控该巨磁阻器件,设计出磁阻比率可调的磁信息存储器.

A magnetoresistance （MR） device was proposed by depositing two parallel ferromagnetic stripes on top and bottom of a semiconductor heterostructure. In order to manipulate its performance, we are studied theoretically the changes of transmission, conductance and MR ratio after dope a tunable δ- potential into the device. It is confirmed that an obvious MR effect still exists in the device even though a ＆doping is comprised. Results show that the MR ratio varies intensely with the weight and/or the posi- tion of the ＆doping. Therefore, one can manipulate structurally the MR device by altering the ＆doping, and a tunable MR device can be obtained for magnetic information storage.