石墨烯的等离子体增强化学气相沉积法合成

Graphene preparation with plasma enhanced chemical vapor deposition

石墨烯具有优异的光电性能,是极具潜力的新一代导电材料。采用传统的热化学气相沉积法制备单层石墨烯需要高温反应条件,试验尝试采用等离子体增强化学气相沉积法(Plasma Enhanced Chemical Vapor Deposition,PECVD),在550℃的反应温度下,较短的反应时间内,在铜箔衬底上制备出石墨烯薄膜。考察了甲烷和氢气流量比、氩气的作用以及衬底通电与否等因素对石墨烯生长的影响。研究发现,在甲烷与氢气流量比为1∶1,通入氩气,不给铜箔衬底通电的试验条件下,制备出的石墨烯薄膜电阻值为4.15 kΩ,显示出较好的光电特性。

Graphene has many unusual properties, such as efficient heat and electricity conduction. In practical application, large-scale pattern growth of graphene is very difficult via chemcial vapor deposi- tion method. It is found that graphene preparation can be undergo with plasma enhanced chemical va- por deposition. Trials are carried out from the aspect of volume ratio of CH~ to H~, Ar atmosphere and metal-catalyst. Results show that the graphene has good photoelectrical property with restistance of 4.15 kΩ, if prepared with CH4 to H2 of 1 ： 1, Ar atmosphere and Cu foil without powered action.