P-N结太阳电池暗特性的数值分析

Numerical Analysis of Dark Characteristics of P-N Junction Solar Cells

以Ga As/Ge太阳电池为例使用PC1D太阳电池模拟程序分析P-N结太阳电池的串联电阻、并联电阻、反向饱和电流和品质因子对其暗I-V特性曲线影响的基本规律.研究结果表明,串联电阻的变化对开启电压没有影响,而随串联电阻的增大,在正向电压高于开启电压的范围内暗I-V特性曲线斜率减小;在正向电压低于开启电压范围内I-V特性曲线斜率随并联电阻的减小逐渐增大并接近纯电阻电路的I-V特性;随二极管反向饱和电流的增大,P-N结的开启电压明显减小,而随品质因子的增大开启电压基本不变.

In this paper,taking Ga As/Ge solar cells as an example,the basic law of series resistance,parallel resistance,reverse saturation current and quality factor of P-N junction solar cells affecting on its dark I-V characteristic curves is analyzed using the PC1 D solar cells simulation program. The results show that the change of series resistance has no influence on the turn-on voltage. With the increasing of series resistance,the slope of the dark I-V characteristic curve decreases when the forward voltage is higher than the turn-on voltage. When the forward voltage is lower than the turn-on voltage,the slope of the I-V characteristic curve gradually increases as the parallel resistance decreases and approaches the I-V characteristic of the pure resistance circuit. With the increasing of diode reverse saturation current,the turn-on voltage of P-N junction decreases obviously. But the turn-on voltage is basically the same with the increasing of quality factor.