宽剂量率范围的集成电路瞬时电离辐射效应模拟方法研究

Simulation of Transient Ionizing Radiation-induced Response on CMOS IC under all dose-rate regime

借助于计算机开展器件和电路辐射效应的数值模拟,已成为抗辐射加固电路设计、制造和辐射性能预测、评估的重要环节。文章深入研究了国际上先进的光电流模型,提出了一种适用于较宽剂量率范围的集成电路瞬时电离辐射效应模拟方法。针对一种CMOS电压反馈型运算放大器,建立了器件和整体电路的瞬时电离辐射效应SPICE模型,采用MATLAB和HSPICE相结合的方法计算了电路在多种约束条件下(电路设计参数、辐射条件等)的瞬时电离辐射响应(瞬态峰值电平和恢复时间)。本研究为其他类型CMOS集成电路在较宽剂量率范围下的瞬时电离辐射效应建模和仿真提供了参考。

Simulation of radiation response has played an prediction and evaluation performance of radiation hardness in Advanced photo current modeling important part on tegrated design, production, circuit and electronic equipment. have been researched, a method of transient ionizing radiation response simulation on integrated circuit under all dose-rate regime is being put forward. In the paper, device model and circuit model of transient ionizing radiation effects of operational amplifier have been established. The model has been implemented in the circuit simulator HSPCIE and extensive computer simulations of radiation response （ both peak transient altitude and recovery time） have been performed. Some generalizations have been obtained .