摘要
The tunable terahertz（THz） filter has been designed and studied, which is composed of 1D photonic crystal（PC） containing a defect layer of semiconductor Ga As. The analytical solution of 1D defective PC（1DDPC） is deduced based on the transfer matrix method, and the electromagnetic plane wave numerical simulation of this 1DDPC is performed by using the finite element method. The calculated and simulated results have confirmed that the filtering transmittance of this 1DDPC in symmetric structure of air/（Si/SiO_2）~N/GaAs/（SiO_2/Si）~N/air is far higher than in asymmetric structure of air/（Si/SiO_2）~N/GaAs/（Si/SiO_2）~N/air, where the filtering frequency can be tuned by the external pressure. It can provide a feasible route to design the external pressure-controlled THz filter based on 1DPC with a defective semiconductor.
The tunable terahertz（THz） filter has been designed and studied, which is composed of 1D photonic crystal（PC） containing a defect layer of semiconductor Ga As. The analytical solution of 1D defective PC（1DDPC） is deduced based on the transfer matrix method, and the electromagnetic plane wave numerical simulation of this 1DDPC is performed by using the finite element method. The calculated and simulated results have confirmed that the filtering transmittance of this 1DDPC in symmetric structure of air/（Si/SiO_2）~N/GaAs/（SiO_2/Si）~N/air is far higher than in asymmetric structure of air/（Si/SiO_2）~N/GaAs/（Si/SiO_2）~N/air, where the filtering frequency can be tuned by the external pressure. It can provide a feasible route to design the external pressure-controlled THz filter based on 1DPC with a defective semiconductor.
基金
partially supported by National Natural Science Foundation of China(Grant Nos.11174147,11175152 and11704326)
the Funding of Jiangsu Innovation Program for Graduate Education(Grant No.KYLX15_0316)
the Fundamental Research Funds for the Central Universities
