光刻技术与电化学相结合的叉指微电极制备工艺研究

Preparation of Interdigitated Microelectrodes Based on the Combination of Photolithography and Electrochemistry Technology

将光刻技术与电化学技术相结合,以AM175型光敏胶为光刻材料,以氧化铟锡(ITO)导电玻璃为基底,摸索与控制实验条件,优化光刻过程的工艺实验参数,实现了共平面的20~200μm的叉指微电极制备.优化的关键工艺参数为365nm的紫外光曝光时间2s,超声清洗7s,碱液Na2CO3浓度为1.5%.以6mol/L HCl溶液为腐蚀液,-2.5V的恒电位法腐蚀裸露ITO40s.采用原子力显微镜(AFM)测定微电极的导电层厚度约为160nm,表面粗糙度~2.5nm.该制备方法操作简单快速、腐蚀效果好、侧蚀程度小等优点.

Using AM175 photoresist as the photolithography material,indium tin oxide （ITO） as the substrate,by exploring the experiment conditions and optimizing the photolithography tech- nique and experimental parameters,the coplanar interdigitated microelectrodes with 20~200μm si- zes were prepared by combination of the photolithography with the electrochemistry technology. The optimizing technique parameters were as follows：2 s for the exposure time under 365nm UV- light,7 s for ultrasonic cleaning time, 1.5% for the concentration of NazCO3,40 s for the etch time for bare ITO when using 6mol/L HC1 as solution and --2. 5V for the chronoamperometry. The thickness of prepared microelectrodes was about 160 nm with a roughness of^2.5nm measured by Atomic Force Microscopy （AFM）. This new method has the merits of easy and fast operation,ex- cellent etch result and less lateral erosion.