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g-C_3N_4复合TiO_2纳米管阵列的制备及表征

Preparation and Characterization of g-C_3N_4 Composite TiO_2 Nanotube Arrays
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摘要 采用阳极氧化法制备出TiO_2纳米管阵列,再通过浸渍法实现石墨相C_3N_4(g-C_3N_4)对TiO_2纳米管阵列的复合。研究表明,g-C_3N_4复合能显著提高TiO_2纳米管阵列的光电化学性能,且经三次g-C_3N_4浸渍的TiO_2纳米管阵列性能最佳。 TiO2 nanotube arrays are prepared by anodic oxidation, and then the composite of g - C3 N4 and TiO2 nanotube arrays is achieved by impregnation. The results show that g - C3 N4 composite can signifi- cantly improve the photoelectrochemical properties of TiO2 nanotube arrays, TiO2 nanotube arrays for three times g- C3N4 impregnation have the best performance.
作者 周淑慧 刘世凯 刘鑫鑫 ZHOU Shuhui , LILT Shikai, LIU Xinxin(School of Materials Science and Engineering , Henan University of Technology , Zhengzhou 450001 , Chin)
出处 《河南化工》 CAS 2018年第2期17-19,共3页 Henan Chemical Industry
基金 河南省教育厅自然科学项目(14B430019 18B430005) 河南省科技厅自然科学项目(172102210227)
关键词 TIO2 纳米管阵列 阳极氧化 g-C3N4 光电化学性能 titanium dioxide nanotube arrays anodic oxidation g- C3N4 photoelectrochemicalproperties
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