大功率SiC-MOSFET模块驱动技术研究

Research on the Techniques of High Power SiC-MOSFET Driver

为适应SiC-MOSFET相比Si-IGBT具有更快的开关速度、更低的工作损耗,同时开通阈值电压较低、短路耐量较弱等特点,研究了与其匹配的驱动技术。主要对漏极电压有源钳位、电路桥臂串扰抑制、过流检测等若干SiC-MOSFET驱动技术进行研究,并基于三菱大功率SiC-MOSFET模块开发配套驱动进行测试。结果表明,该驱动所采用的镜像电流检测法能快速有效地对SiC-MOSFET模块进行过流检测与保护,同时漏极电压有源钳位能及时有效抑制大电流关断所产生的电压尖峰。

In order to adapt to the characteristics of SiC-MOSFET, such as faster switching speed, lower loss but lower thresholdvoltage and weaker short-circuit capacity compared to Si-IGBT, the key techniques of SiC-MOSFET driver was analyzed, includingdrain voltage active clamping, bridge-arm crosstalk suppression, and over-current detection etc, as well as the test aiming at the driverfor Mitsubishi SiC-MOSFET module. The results showed that the mirror-current sensing method could give a good protection for SiC-MOSFET, and the active clamping could reduce the high voltage surges across the high current turned-off.