金属氧化物半导体控制晶闸管的di/dt优化

di/dt Optimization of the Metal Oxide Semiconductor Controlled Thyristor

金属氧化物半导体控制晶闸管（MCT）相比于绝缘栅双极型晶体管（IGBT）具有高电流密度、低导通压降和快速开启等优势,在高压脉冲功率领域具有广阔的应用前景。作为脉冲功率开关,MCT开启过程对输出脉冲信号质量有很大影响。采用理论分析并结合仿真优化重点研究了MCT开启瞬态特性。通过对MCT开启过程进行详细地理论分析推导,给出了MCT开启过程中阳极电流和上升时间的表达式。结合Sentaurus TCAD仿真优化,将MCT开启过程中电流上升速率（di/dt）由40 kA/s提升至80 kA/s,极大地改善了器件开启瞬态特性。最后,总结提出了提高器件开启瞬间di/dt的设计途径。

The metal oxide semiconductor（ MOS） controlled thyristor（ MCT） has broad application prospects in the field of high voltage pulse power due to its higher current density,lower forward voltage drop and faster turn-on speed compared with the insulated gate bipolar transistor（ IGBT）. As a pulse power switch,the MCT turn-on process has a great influence on the quality of the output pulse signal. The MCT turn-on transient characteristics were emphatically studied by theoretical analysis and simulation optimization. Through the detailed theoretical analysis and derivation of the MCT turn-on process,the expressions of the anode current and rise time during the MCT turn-on process were given. The current rise rate（ di/dt） during the MCT turn-on process was improved from 40 kA/s to 80 kA/s by the Sentaurus TCAD simulation and optimization,which greatly improves the turn-on transient characteristics of the device. Finally,the design approaches to enhance the di/dt of the device at the turn-on moment were summarized.