摘要
在氧化铟锡(ITO)玻璃导电基底上,通过电化学沉积制备CuO_x薄膜。产物的最高已占轨道(HOMO)能级和最低未占轨道(LUMO)能级分别是-5.31 eV和-3.30 eV,与钙钛矿CH_3NH_3PbI_3的能级匹配。将产物作为空穴传输层,采用反向平面结构:ITO/CuO_x/CH_3NH_3PbI_3/C_(60)/2,9-二甲基-4,7-联苯-1,10-菲罗啉(BCP)/Ag制作钙钛矿太阳能电池,获得最高13.0%的光电转换效率,其中开路电压为0.99 V,短路电流密度为20.2 m A/cm^2,填充因子为65%。
The CuOx film on indium tin oxide（ITO） conductive glass substrate was synthesized via electrochemical deposition. The highest occupied molecular（HOMO） and lowest unoccupied molecular（LUMO） energy levels were - 5. 31 eV and - 3.30 eV, respectively, which matched well with those of CH3 NH3 PbI3 perovskite. It was utilized as hole-transporting layer in perovskite solar cells with device configuration of ITO/CuOx/CH3 NH3 Pbi3/C60/2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline （ BCP ）/Ag. The champion photoelectric conversion efficiency of 13.0% was obtained with open circuit voltage of 0. 99 V, short-circuit current density of 20. 2 mA/cm2 and fill factor of 65%.
作者
闫伟博
李云龙
YAN Wei-bo1, LI Yun-long2(1. Key Laboratory for Organic Electronics and Information Displays ＆ Institute of Advanced Materials ,Nanjing University of Posts ＆ Telecommunications,Nanfing,Jiangsu 210023,China; 2. Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, Guangdong 518055, China)
出处
《电池》
CAS
CSCD
北大核心
2018年第1期17-20,共4页
Battery Bimonthly
基金
国家自然科学基金青年项目(61704087)
江苏省自然科学基金青年项目(BK20160887)
关键词
太阳能电池
氧化亚铜
无机p-型半导体
空穴传输层
电化学沉积
solar cell
cuprous oxide
inorganic p-type semiconductor
hole-transporting layer
electrochemical deposition
