摘要
Spectral, temporal and polarization characteristics of spontaneous and stimulated luminescence of Al0.5Ga0.5N/A1N structures grown by molecular beam epitaxy were studied at the optical pulsed pumping with 2 = 266 nm. Samples with a high degree of silicon doping were investigated. The vast majority of radiation falls on transitions within the band gap between the levels of defects. As a result, the radiation band embracing the whole visible range of more than 300 THz is observed in both spontaneous radiation and induced luminescence. In spon- taneous radiation the band has a smooth spectral intensity distribution over the wavelengths, whereas induced radi- ation has its sharp peaks corresponding to the mode structure of the planar waveguide. The measured gain of the active medium is g ≈ 70 cm 1 for a weak signal.
Spectral, temporal and polarization characteristics of spontaneous and stimulated luminescence of Al0.5Ga0.5N/A1N structures grown by molecular beam epitaxy were studied at the optical pulsed pumping with 2 = 266 nm. Samples with a high degree of silicon doping were investigated. The vast majority of radiation falls on transitions within the band gap between the levels of defects. As a result, the radiation band embracing the whole visible range of more than 300 THz is observed in both spontaneous radiation and induced luminescence. In spon- taneous radiation the band has a smooth spectral intensity distribution over the wavelengths, whereas induced radi- ation has its sharp peaks corresponding to the mode structure of the planar waveguide. The measured gain of the active medium is g ≈ 70 cm 1 for a weak signal.
基金
funded by RFBR according to the research project No 16-02-00018
financial support by Ministry of Education and Science of the Russian Federation (id RFMEFI62117X0018)
