摘要
Four-junction A1GaAs/GaAs laser power converters （LPCs） with n＋-GaAs/p＋-A10.37Ga0.63As hetero- structure tunnel junctions （TJs） have been designed and grown by metal-organic chemical vapor deposition （MOCVD） for converting the power of 808 nm lasers. A maximum conversion efficiency ηc of 56.9% ＋ 4% is obtained for cells with an aperture of 3.14 mm2 at an input laser power of 0.2 W, while dropping to 43.3% at 1.5 W. Measured current-voltage （I-V） characteristics indicate that the performance of the LPC can be further improved by increasing the tunneling current density of TJs and optimizing the thicknesses of sub-cells to achieve current matching in LPC.
Four-junction A1GaAs/GaAs laser power converters （LPCs） with n＋-GaAs/p＋-A10.37Ga0.63As hetero- structure tunnel junctions （TJs） have been designed and grown by metal-organic chemical vapor deposition （MOCVD） for converting the power of 808 nm lasers. A maximum conversion efficiency ηc of 56.9% ＋ 4% is obtained for cells with an aperture of 3.14 mm2 at an input laser power of 0.2 W, while dropping to 43.3% at 1.5 W. Measured current-voltage （I-V） characteristics indicate that the performance of the LPC can be further improved by increasing the tunneling current density of TJs and optimizing the thicknesses of sub-cells to achieve current matching in LPC.
基金
Project financially supported by the National Natural Science Foundation of China(No.61376065)
Zhongtian Technology Group Co.Ltd
