摘要
直接从忆感器的定义出发,建立了一种磁控忆感器的数学模型,基于该模型采用通用电路元器件设计了一种不包含忆阻器的磁控忆感器"浮地"电路模拟器,借助Matlab和Multisim仿真工具软件,进行了等效忆感电路模拟器在不同信号、不同参数下的系统级仿真实验,完成了硬件电路的实现及性能测试。软件仿真和硬件测试结果均表明:所设计的磁控忆感器具有磁通-电流之间的自收缩磁滞回线特性,是一种具有记忆特性的非线性电感,这与理论概念上的忆感器特性相吻合,从而为忆感器在电子学领域产生新的应用电路提供了器件模拟实体。
A mathematical model of a flux-controlled meminductoris proposed, which is directly from the definition. A practical floating flux-controlled meminductor emulator is implemented with common off-the-shelf components based on the model, which does not contain any memristor.In the different signals and parameters, the system-level circuit simulation experiments are presented by Matlab and Multisim simulation platform.The implementation of hardware circuit and the results of performance tests are presented. Software simulation and hardware test results show that the flux-current relation of the equivalent meminductor typically behaves as a pinched hysteresis loop characteristic and depends on the frequencies and amplitudes of applied voltage stimulus, which indicates that it is a kind of nonlinear inductor with memory and accords with the concept of meminductor.It provides for the devices simulation entities to carry out new application circuits in electronic field.
作者
杨凌
石莹
胡丙萌
陈璐
苏婧
Yang Ling;Shi Ying;Hu Bingmeng;Chen Lu;Su Jing(School of Information Science and Engineering, Lanzhou University, Lanzhou 730000, Chin)
出处
《系统仿真学报》
CAS
CSCD
北大核心
2018年第4期1337-1346,共10页
Journal of System Simulation
关键词
浮地
磁控忆感器
模拟器
磁滞回线特性
floating
flux-controlled meminductor
emulator
hysteretic loop