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同轴-环形TSV电学性能 被引量:3

Electrical Characteristics of Coaxial-Annular Through Silicon Via
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摘要 针对性能优越的同轴-环形硅通孔(Coaxial-Annular Through Silicon Via,CA-TSV)结构,提出特征阻抗、功率、时间常数及寄生参数的解析模型,研究结构参数对电学特性的影响,并通过HFSS软件对S21参数进行验证.结果表明:增加CA-TSV的内径或减小其外径可以有效减小特征阻抗,而减小其内径或增加其外径可以有效减小功率;增加CA-TSV的内径或外径可以有效减小RC等效电路的时间常数,而增大其内径或减小其外径可以有效减小RL等效电路的时间常数;增加CA-TSV的内径或外径可以有效减小电阻并且可以使电容值显著提高. For coaxial-annular through silicon vias(CA-TSV) structure with superior performances,characteristic impedance,power,time constant and analytical models of parasitic parameters are proposed and effects of structural parameters on electrical properties are studied. S21 parameter was verified by software HFSS. It shows that increasing inner diameter of CA-TSV or reducing outer diameter reduces characteristic impedance,while reducing inner diameter of CA-TSV or increasing outer diameter reduces its power consumption effectively. Increasing inner diameter of CA-TSV or outer diameter reduces time constant of RC equivalent circuit,whereas increasing inner diameter of CA-TSV or reducing outer diameter reduces time constant of RL equivalent circuit. Increasing inner diameter of CA-TSV or outer diameter reduces resistance effectively and capacitance can be increased significantly. It provides reference for electrical properties of three-dimensional integrated circuits based on TSV interconnects.
作者 王凤娟 王刚 余宁梅 WANG Fengjuan;WANG Gang;YU Ningmei(School of Automation and Information Engineering, Xi' an University of Technology, Xi' an 710045, China)
出处 《计算物理》 EI CSCD 北大核心 2018年第2期242-252,共11页 Chinese Journal of Computational Physics
基金 国家自然科学基金(61774127,61404105,61771388和61471296)资助项目
关键词 同轴-环形硅通孔 三维集成电路 电学性能 CA-TSV 3D-IC electrical characteristics
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  • 1Xie Y, Chang Y W, Wang Y 2010 15th Asia and South Pacific Design Automation Conference ( ASP-DAC), Taiwan, Taibei, January 18-21,2010 p169.
  • 2Andry P S, Tsang C K, Webb B C, Sprogis E J, Wright S L, Bang B, Manzer D G 2008 IBM J. Resear, and Develop. 52 571.
  • 3LauJ H, Lim Y Y, Lim T G, Tang G Y, Khong C H 2008 Proceedings of SPIE- Photonics Packaging, Integration, and Interconnects VIII, San Jose, USA, January 19-24, 2008 DOI: 689907.
  • 4John H L, Tang G Y 2009 1EEE 59th Electronic Components and Technology Conference San Diego, CA, USA, May 26-29, 2009 p635.
  • 5张金松 吴懿平 王永国 陶媛.物理学报,59:4395-4395.
  • 6Shiv G S, Chuan S T 2009 IEEE International Conference on 3D System Integration, Washington, DC, USA, September 28-30, 2009 DOI:5306527.
  • 7Puttaswamy K, Lob G H 2006 Proceedings of the 16th ACM Great Lakes Symposium on VLSI, Washington, DC, USA, September 12-14, 2006 p19.
  • 8Cong J, Luo G J 2009 14th Asia and South Pacific Design Automation Conference ( ASP-DAC) , Yokohama, Japan, January 19-22, 2009 p361.
  • 9Yan H X, Zhou Q, Hong X L 2009 Integration, the VLSI Journal 42 175.
  • 10Jain A, Jones R E, Chatterjee R, Pozder S, Huang Z H 2008 11th lntersocicty Conference Thermal and Thermo-mechanical Phenomena in Electronics Systems (ITHERM), Orlando, Florida, USA, May 28-31 2008 p1139.

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