期刊文献+

Fullerene/cobalt porphyrin charge-transfer cocrystals: Excellent thermal stability and high mobility 被引量:1

Fullerene/cobalt porphyrin charge-transfer cocrystals: Excellent thermal stability and high mobility
原文传递
导出
摘要 尽管有高活动性和热稳定性的器官的半导体为实际应用程序是特别地合乎需要的,为他们的开发的灵巧的方法仍然是大挑战。在这个工作,费用转移 cocrystal 基于 fullerene (C <sub>70</sub>)/cobalt 卟啉超分子的建筑学被 solution-processable 合作集会策略准备。这超分子的体系结构象 4.21 cm2 一样高显示出洞活动性 ?????  ?????????  ?????????????? 壍 ??  ? 吗?? Although organic semiconductors with high mobility and thermal stability are particularly desirable for practical applications, facile methods for their development still remains a big challenge. In this work, a charge-transfer cocrystal based on fullerene (C70)/cobalt porphyrin supramolecular architecture was prepared by a solution-processable co-assembly strategy. This supramolecular architecture showed hole mobility as high as 4.21 cm2·V-1·s-1, and a relatively high mobility of 0.02 cm2·V-1·s-1 even after thermal treatment at 1,000 ℃. Further studies confirmed the occurrence of charge-transfer from 5,10,15,20- tetrakis(4-methoxyphenyl)porphyrinato cobalt(II) (CoTMPP) to Czo and the paramagnetic character within the supramolecular system. These factors were found to be responsible for the aforementioned superior performances. Thus, a novel organic semiconductor has been reported in this work, which can be potentially used for next generation electronic devices. Furthermore, it has been demonstrated that charge-transfer co-crystallization is a powerful strategy for the rational design and construction of a broad class of new multifunctional organic co-crystalline materials.
出处 《Nano Research》 SCIE EI CAS CSCD 2018年第4期1917-1927,共11页 纳米研究(英文版)
基金 Financial support from the National Thousand Talents Program of China, the National Natural Science Foundation of China (Nos. 51472095, 51602112, 51672093 and 21103224), Program for Changjiang Scholars and Innovative Research Team in University (No. IRT1014), Key Laboratory of Functional Inorganic Material Chemistry (Heilongjiang University), and Ministry of Education are gratefully acknowledged. This work was partially supported by Japan Society for the Promotion of Science (JSPS) (Nos. JP16F16360, 26102011, 26249145, and 15K21721). We thank the Analytical and Testing Center in Huazhong University of Science and Technology for all related measurements. We also acknowledge Dr. Akihiko Fujiwara and Dr. Ktmihisa Sugimoto for single-crystal XRD measurement.
关键词 热稳定性 活动性 费用 卟啉 FULLERENE 超分子 应用程序 体系结构 organic semiconductor,fullerene/porphyrin,thermal stability,mobility,charge-transfer
  • 相关文献

参考文献2

二级参考文献43

  • 1Scott, J. F. Data storage: Multiferroic memories. Nat. Mater. 2007, 6, 256-257.
  • 2Hut, N.; Park, S.; Sharma, P. A.; Ahn, J. S.; Guha, S.; Cheong, S. W. Electric polarization reversal and memory in a multiferroic material induced by magnetic fields. Nature 2004, 429, 392-395.
  • 3Lage, E.; Kirchhof, C.; Hrkac, V.; Kienle, L.; Jalms, R.; Kn/chel, R.; Quandt, E.; Meyners, D. Exchange biasing of magnetoelectric composites. Nat. Mater. 2012, 11, 523-529.
  • 4Cheong, S. W.; Mostovoy, M. Multiferroics: A magnetic twist for ferroelectricity. Nat. Mater. 2007, 6, 13-20.
  • 5Wang, Y.; Hu, J. M.; Lin, Y. H.; Nan, C. W. Multiferroic magnetoelectric composite nanostrucmres. NPG Asia Mater. 2010, 2, 61-68.
  • 6Wu, S. M.; Cybart, S. A.; Yu, P.; Rossell, M. D.; Zhang, J. X.; Ramesh, R.; Dynes, R. C. Reversible electric control of exchange bias in a multiferroic field-effect device. Nat. Mater. 2010, 9, 756-761.
  • 7Ramesh, R.; Spaldin, N. A. Multiferroics: Progress and prospects in thin films. Nat. Mater. 2007, 6, 21-29.
  • 8Tokura, Y.; Seki, S.; Nagaosa, N. Multiferroics of spin origin. Rep. Prog. Phys. 2014, 77, 076501.
  • 9Yang, Y. R.; ifiiguez, J.; Mao, A.-J.; Bellaiche, L. Prediction of a novel magnetoclectric switching mechanism in multiferroics. Phys. Rev. Lett. 2014, 112, 057202.
  • 10Kimura, T.; Goto, T.; Shintani, H.; Ishizaka, K.; Arima, T.; Tokura, Y. Magnetic control of ferroelectric polarization. Nature 2003, 426, 55-58.

共引文献5

引证文献1

二级引证文献2

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部