Optical properties and applications for MoS_2-Sb_2Te_3-MoS_2 heterostructure materials

Two-dimensional(2D) materials with potential applications in photonic and optoelectronic devices have attracted increasing attention due to their unique structures and captivating properties. However, generation of stable high-energy ultrashort pulses requires further boosting of these materials' optical properties, such as higher damage threshold and larger modulation depth. Here we investigate a new type of heterostructure material with uniformity by employing the magnetron sputtering technique. Heterostructure materials are synthesized with van der Waals heterostructures consisting of MoS_2 and Sb_2Te_3. The bandgap, carrier mobility, and carrier concentration of the MoS_2-Sb_2Te_3-MoS_2 heterostructure materials are calculated theoretically. By using these materials as saturable absorbers(SAs), applications in fiber lasers with Q-switching and mode-locking states are demonstrated experimentally. The modulation depth and damage threshold of SAs are measured to be 64.17%and 14.13 J∕cm^2, respectively. Both theoretical and experimental results indicate that MoS_2-Sb_2Te_3-MoS_2 heterostructure materials have large modulation depth, and can resist high power during the generation of ultrashort pulses. The MoS_2-Sb_2Te_3-MoS_2 heterostructure materials have the advantages of low cost, high reliability, and suitability for mass production, and provide a promising solution for the development of 2D-material-based devices with desirable electronic and optoelectronic properties.

Two-dimensional （2D） materials with potential applications in photonic and optoelectronic devices have at- tracted increasing attention due to their unique structures and captivating properties. However, generation of stable high-energy ultrashort pulses requires further boosting of these materials＇ optical properties, such as higher damage threshold and larger modulation depth. Here we investigate a new type of heterostructure material with uniformity by employing the magnetron sputtering technique. Heterostructure materials are syn- thesized with van der Waals heterostructures consisting of MoS2 and Sb2T%. The bandgap, carrier mobility, and carrier concentration of the MoS2-Sb2Te3-MoS2 heterostructure materials are calculated theoretically. By using these materials as saturable absorbers （SAs）, applications in fiber lasers with Q-switching and mode-locking states are demonstrated experimentally. The modulation depth and damage threshold of SAs are measured to be 64.17% and 14.13 J/cm2, respectively. Both theoretical and experimental results indicate that MoS2-SbeTe3-MoS2 het- erostructure materials have large modulation depth, and can resist high power during the generation of ultrashort pulses. The MoS2-SbeTe3-MoS2 heterostructure materials have the advantages of low cost, high reliability, and suitability for mass production, and provide a promising solution for the development of 2D-material-based devices with desirable electronic and optoelectronic properties.