摘要
In this study,indium oxide(In2O3) thin-film transistors(TFTs) are fabricated by two kinds of low temperature solution-processed technologies(Ta ≤ 300℃),i.e.,water-based(DIW-based) process and alkoxide-based(2-ME-based)process.The thickness values,crystallization properties,chemical structures,surface roughness values,and optical properties of In2O3 thin-films and the electrical characteristics of In2O3 TFTs are studied at different annealing temperatures.Thermal annealing at higher temperature leads to an increase in the saturation mobility(μsat) and a negative shift in the threshold voltage(VTH).The DIW-based processed In2O3-TFT annealed at 300℃ exhibits excellent device performance,and one annealed at 200℃ exhibits an acceptable μsat of 0.86 cm^2/V·s comparable to that of a-Si:H TFTs,whereas the 2-ME-based TFT annealed at 300℃ exhibits an abundant μsat of 1.65 cm^2/Vs and one annealed at 200℃ is inactive.The results are attributed to the fact that the DIW-based process induces a higher degree of oxidation and less defect states than the 2-ME-based process at the same temperature.The DIW-based process for fabricating the In2O3 TFT opens the way for the development of nontoxic,low-cost,and low-temperature oxide electronics.
In this study,indium oxide(In2O3) thin-film transistors(TFTs) are fabricated by two kinds of low temperature solution-processed technologies(Ta ≤ 300℃),i.e.,water-based(DIW-based) process and alkoxide-based(2-ME-based)process.The thickness values,crystallization properties,chemical structures,surface roughness values,and optical properties of In2O3 thin-films and the electrical characteristics of In2O3 TFTs are studied at different annealing temperatures.Thermal annealing at higher temperature leads to an increase in the saturation mobility(μsat) and a negative shift in the threshold voltage(VTH).The DIW-based processed In2O3-TFT annealed at 300℃ exhibits excellent device performance,and one annealed at 200℃ exhibits an acceptable μsat of 0.86 cm^2/V·s comparable to that of a-Si:H TFTs,whereas the 2-ME-based TFT annealed at 300℃ exhibits an abundant μsat of 1.65 cm^2/Vs and one annealed at 200℃ is inactive.The results are attributed to the fact that the DIW-based process induces a higher degree of oxidation and less defect states than the 2-ME-based process at the same temperature.The DIW-based process for fabricating the In2O3 TFT opens the way for the development of nontoxic,low-cost,and low-temperature oxide electronics.
作者
栗旭阳
喻志农
程锦
陈永华
薛建设
郭建
薛唯
Xu-Yang Li;Zhi-Nong Yu;Jin Cheng;Yong-Hua Chen;Jian-She Xue;Jian Guo;Wei Xue(School of Optics and Photonics and Beijing Engineering Research Center of Mixed Reality and Advanced Display, Beijing Institute of Technology, Beijing 100081, China;Beijing BOE Optoelectronics Technology Co., Ltd, Beijing 100176, China)
基金
Project supported by the National Natural Science Foundation of China(Grant No.61675024)
the National Basic Research Program of China(Grant No.2014CB643600)