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高压熔体法生长高质量CdSe单晶 被引量:1

Growth of High Quality CdSe Single Crystal by High-Pressure Melt Method
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摘要 CdSe晶体是一种性能优异的非线性光学材料,但目前常规的生长方法很难生长出高质量单晶。本实验在理论推导的基础上,采用高压熔体法生长出了较大尺寸的CdSe晶体棒,并采用X射线衍射仪、能谱分析仪、腐蚀坑观察、Fourier变换红外光谱仪对单晶性能进行表征。结果表明:高压熔体法生长的CdSe单晶组分接近理想化学计量比(CdSe0.989),且具备结构完整、位错密度小(10^4/cm^2)、结晶质量高(FWHM≤0.1°)、吸收系数低(0.03cm^-1以内),有望用于非线性光学频率转换实验。 It is difficult for conventional growth methods to prepare high quality CdSe single crystals. Based on the theoretical deduction, we obtained large crystals by a high-pressure melt growth method. The crystal samples were characterized by X-ray diffraction, etch-pit observation, energy dispersive spectroscopy and Fourier transform infrared spectroscopy, respectively. The results show that the crystal component has a little deviation of stoichiometric ratio (i.e., CdSe0.989), small dislocations (i.e., 10^4/cm^2), good crystalline integrity (i.e., FWHM≤0.1°) and low absorption coefficient (i.e., 〈 0.03 cm^-1). The crystal grown by this method could be used in the nonlinear optical frequency conversion.
作者 陈诗静 黄昌保 倪友保 吴海信 王振友 CHEN Shiing;HUANG Changbao;NI Youbao;WU Haixin;WANG Zhenyou(Anhui Provincial Key Laboratory of Photonic Devices and Materials, Anhui Institute of Optics and Fine Mechanics, and Hefei Institutes of Physical Sciences, Chinese Academy of Sciences, Hefei 230031, China;University of Science and Technology of China, Hefei 230026, China)
出处 《硅酸盐学报》 EI CAS CSCD 北大核心 2018年第4期518-523,共6页 Journal of The Chinese Ceramic Society
基金 中国科学院知识创新工程(CXJJ-16M128)资助项目
关键词 硒化镉晶体 高压熔体法 分解率 光学质量 cadmium selenide crystal high-pressure melt growth method decomposition rate optical quality
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