120nm SiGe BiCMOS 90～100GHz低噪声放大器

A 120nm SiGe BiCMOS 90～100GHz Low Noise Amplifier

基于IBM8HP 120nm SiGe BiCMOS工艺,分析了晶体管的最小噪声系数和最大可用增益特性。采用两级Cascode放大器级联结构,研制出一种频带为90~100GHz的低噪声放大器(LNA)。详细分析了Cascode放大器潜在的自激可能性,采用串联小电阻的方式消除不稳定性。与电磁仿真软件Sonnet联合仿真,结果表明,在频带内,放大器的输入反射系数S_(11)<-18dB,输出反射系数S_(22)<-12dB;在94GHz处,噪声系数为8dB,增益为14.75dB,输出1dB压缩点功率为-7.9dBm;在1.8V供电电压下,整个电路的功耗为14.42mW。该放大器具有低噪声、低功耗的特点。

The minimum noise figure and the maximum available gain of the transistor based on the IBM8 HP 120 nm SiGe BiCMOS process were analyzed at length.Then a low noise amplifier with a band of 90 GHz to 100 GHz was designed by using a two-stage cascaded cascode structure.By analyzing the potential self-excited possibility of the cascode structure in detail,the series of small resistors were utilized to eliminate the instability.Simulated with the electromagnetic simulation software Sonnet,the final simulation results showed that the input reflection coefficient （S11） was below -18 dB,the output reflection coefficient（S22）was below -12 dB within the band.At 94 GHz,the noise figure（NF）was 8 dB,the power gain was 14.75 dB,and the 1 dB compression point of output power（OP1dB）was -7.9 dBm.At a supply voltage of 1.8 V,the power consumption was 14.42 mW.The proposed circuit had the advantages of low noise,low power consumption.