摘要
为了满足EMC要求,通常需在机载二次DC/DC的输入端并联大容量电容,导致开机瞬间形成很大的浪涌电流,从而引起系统异常。常规的抑制方法是在输入端串联电感、NTC热敏电阻,或者串联MOS管并简单控制其缓慢开通。但这些方法存在输入电压振荡、高温时抑制失败,或者启动延时长且不能抑制重复快速浪涌等缺点。基于MOS管的密勒效应,设计了一种能够延长MOS管开通上升时间的电路,使电容电压上升速率变缓,从而抑制浪涌电流。仿真及验证结果表明,该电路具有启动延时仅有10ms、可抑制最高60 Hz的重复快速上电浪涌、上电速率可调等优点。
In order to satisfy the electromagnetic compatibility standard,bulk capacitors are usually put in parallel with the input lines of airborne secondary DC/DC converters,which would result in a huge surge current and may cause system failures at the moment of powering on.Ordinary suppression methods are to put an inductor,or an NTC thermistor,or an MOSFET in series at the input of DC/DC converter,and then to turn it on very slowly with simple control mode.These methods have disadvantages of input voltage oscillation,suppression failure at high temperature,long delay time and suppression failure under the condition of fast repetitive surges.Based on MOSFET’s Miller effect,a circuit which could greatly extend the rise time for turning on MOSFET was presented.The rise rate of capacitor voltage was get slowed,so the surge current was suppressed.Simulation and actual tested results showed that the proposed circuit had achieved a startup delay time of only 10 ms.It could suppress the fast repetitive surge with a frequency up to 60 Hz.The rise rate of capacitor voltage could be adjusted easily.
作者
杜培德
卢翔
鄢毅之
DU Peide;LU Xiang;YAN Yizhi(Sichuan Institute of Solid-State Circuits, China Electronics Technology Group Corp. , Chongqing 400060, P. R. Chin)
出处
《微电子学》
CAS
CSCD
北大核心
2018年第2期216-221,共6页
Microelectronics
关键词
浪涌电流抑制
密勒效应
MOS管开关特性
surge current suppression
Miller effect
MOSFET switching characteristics