摘要
使用高碘酸钾为氧化剂,在工作压力为10.34kPa、抛光头转速为87r/min、抛光盘转速为93r/min、流量为300mL/min的条件下,研究不同浓度的盐酸胍(GH)对铜钌CMP的影响。电化学和AFM表面形貌图被用来对Ru和Cu表面的化学机理进行分析。实验结果表明,随着GH浓度的升高,Ru和Cu的抛光速率逐步降低,并且达到良好的速率选择比。
Potassium periodate was used as the oxidant,and the effects of different guanidine hydrochloride concentrations on the copper and ruthenium CMP were studied under the various conditions of working pressure of 10.34 kPa,polishing head speed of 87 r/min,polishing disc speed of 93 r/min and flow rate of 300 ml/min.Meanwhile,electrochemistry and AFM surface topography were used to analyze the chemical mechanism of Ru and Cu surfaces.The experimental results showed that the polishing rates of Ru and Cu decreased gradually with the increasing of the concentration of GH,and a good rate selection ratio was achieved.
作者
杜义琛
王辰伟
周建伟
张文倩
季军
何彦刚
罗超
DU Yichen;WANG Chenwei;ZHOU Jianwei;ZHANG Wenqian;JI Jun;HE Yangang;LUO Chao(School of Electronics and Information Engineering, Hebei University of Technology, Tianj in 300130, P. R. China;Tianjin Key Laboratory of Electronic Materials and Devices, Tianjin 300130, P. R. Chin)
出处
《微电子学》
CAS
CSCD
北大核心
2018年第2期280-284,共5页
Microelectronics
基金
国家中长期科技发展规划02科技重大专项资助项目(2009ZX02308)
河北省青年自然科学基金资助项目(F2015202267)
河北省研究生创新资助项目(220056)
关键词
高碘酸钾
盐酸胍
CMP
电化学
抛光液
potassium periodate
guanidine hydrochloride
CMP
electrochemistry
polishing slurry
