单晶蓝宝石基片抛光工艺研究进展

Progress Research in Polishing Process of Single Crystal Sapphire Substrate

对目前抛光单晶蓝宝石基片的工艺方法,如游离磨料磨削、金刚石砂轮磨削、在线电解修整磨削(ELID)、化学机械抛光(CMP)、固结软磨料抛光、磁流变抛光(MRF)、超声振动辅助磨削的加工原理、方法和特点进行综述。分析了各方法的优势和不足以及最新研究成果存在的关键问题。其中游离磨料磨削、在线电解修整磨削、金刚石砂轮磨削的材料去除速率较高,化学机械抛光是抛光大面积基片的唯一方法,磁流变抛光后的基片表面不存在亚表面损伤。根据单晶蓝宝石基片的应用需求和目前抛光方法的不足,对后续研究的方向进行了预测。

In this paper,processing principle,methods and characteristics of free abrasive grinding,diamond wheel grinding,on-line electrolytic dressing grinding（ ELID）,chemical mechanical polishing（ CMP）,consolidated soft abrasive polishing,magneto-rheological polishing（ MRF）,ultrasonic vibration assisted grinding,the advantages and disadvantages of each method are put forward. The key problems for the latest research results of each method are analyzed. Among them,the removal rate of free abrasive grinding,on-line electrolytic dressing grinding,diamond grinding wheel grinding material is high,chemical mechanical polishing is the only way to polish the large area of substrate,magneto-rrane polishing after the surface of the substrate does not exist sub-surface damage. According to the application requirements of single crystal sapphire substrate and the shortcomings of the current polishing method,the direction of the follow-up research is predicted.