原位钼修饰TiO_2/BiVO_4异质结薄膜的制备及其光电化学性能

Preparation and Photoelectrochemistry Properties of in situ Mo Modified TiO_2/BiVO_4 Heterojunction Thin Films

针对TiO_2可见光响应能力不足、BiVO_4光生电子空穴分离能力弱的问题,制备了一种基于钼原位掺杂BiVO_4修饰TiO_2纳米管的高性能Mo-BiVO_4/TiO_2异质结光阳极.实验结果表明,钼掺杂后异质结电极材料的吸收带边约510nm,光电流密度在1.23Vvs.RHE偏压下达到1.48mA/cm2,与未掺杂钼的TiO_2/BiVO_4光电极相比,Mo-BiVO_4/TiO_2光阳极的光电转化效率提高了近50%,光电流密度提高了近2.5倍,光转化效率在0.95Vvs.RHE偏压下提高了2倍,且电极的稳定性较好.

In order to solve the lack of visible light response ability of TiO_2 and the weak separation ability of electron hole of BiVO_4,we developed a cost-effective method based on BiVO_4 in situ Mo-doped modification TiO_2 nanotubes to synthesize high performance Mo-BiVO_4/TiO_2 heterojunction photoanodes.The experimental results show that the absorption band edge of the heterojunction electrode after Mo doped is about 510 nm,the optimized Mo-BiVO_4/TiO_2 photoanode was markedly improved with a photocurrent density of 1.48 mA/cm2 at 1.23 Vvs.RHE,which was 2.5 times that of a TiO_2/BiVO_4 photoanode.Comparison with undoped TiO_2/BiVO_4 electrode.The efficiency of photoelectric conversion of Mo-BiVO_4/TiO_2 photoanode was increased by nearly 50%,and the electrode had perfect stability.