应用于芯片原子钟的微碱金属气室制备与研究

Fabrication and Study of Micro Alkali-Metal Vapor Cell Applied to Chip Scale Atomic Clock

利用感应耦合等离子体深硅刻蚀机与阳极键合机,制备出了应用于芯片原子钟的碱金属气室。以AZ4620光刻胶为硅片掩模,研究了深硅刻蚀后硅表面的形貌特征,对比了不同结构下深硅刻蚀速率。经过阳极键合,获得了三明治结构的微碱金属气室,并检测其饱和吸收谱线。实验结果表明:制备出的微碱金属气室在温度为80℃条件下出现明显的饱和吸收现象。

By using the inductively coupled plasma （ICP） deep silicon etching machine and the anodic bonding system, the alkali-metal vapor cell applied to the chip scale atomic clock （CSAC） is fabricated. With the AZ4620 photoresist as a mask, the silicon surface morphology after deep silicon etching is studied and the deep silicon etching rates under different structures are compared. The micro alkali-metal vapor cell with a sandwich structure is obtained by using the anodic bonding, and the saturation absorption line is detected. The experimental results show that a significant saturated absorption phenomenon is observed in the fabricated micro alkali-metal vapor cell when the temperature is 80℃.