期刊文献+

一种硅基二氧化硅结构的超快全光开关 被引量:5

An Ultrafast All-Optical Switch with Silicon-Based Silica Structure
原文传递
导出
摘要 作为全光计算的基本逻辑单元的重要结构,全光开关的研究进展影响着整个全光计算甚至集成光学领域的发展。设计了一种硅基二氧化硅结构的超快全光开关,并通过双色抽运探测实验对光控光开关的消光比以及开关响应时间进行了测试,实现了开关强度比为7…1、开关时间约为500fs的超快全光开关的设计。 As the basic structure of all-optical computing basic logic unit, the research progress of all-optical switch affects the development of all-optical computing and even the development of integrated optical field. An ultrafast all-optical switch with silicon-based silica structure is designed. The extinction ratio and the switch response time of the optically controlled optical switch are measured through two-color pump-probe experiment. The design of ultrafast all-optical switch with the switch intensity ratio of 7:1 and the switching time of 500 fs is realized.
作者 吴永宇 张小平 单欣岩 郭立鹏 Wu Yongyu;Zhang Xiaoping;Shan Xinyan;Guo Lipeng(Department of Computer Science and Technology, Tsinghua University, Beijing 100084, China)
出处 《激光与光电子学进展》 CSCD 北大核心 2018年第4期242-247,共6页 Laser & Optoelectronics Progress
基金 国家自然科学基金(61472210)
关键词 集成光学 硅基二氧化硅 全光开关 响应时间 超快光学 integrated optics silicon-based silica all-optical switch response time ultrafast optics
  • 相关文献

参考文献1

二级参考文献7

  • 1[1]Kawachi M. Silica waveguides on silicon and their application to integrated-optic components.Optical and Quantum Electronics, 1990,22:391~416
  • 2[2]Li Y P, Henry C H. Silica-based optical integrated circuits. IEE Proc Optoelectron, 1996,143(5):263~280
  • 3[3]Kawachi M. Recent progress in silica based planar lightwave circuits on silicon. IEE Proc-Optoelectron,1996,143(5):248~262
  • 4[4]Valette S. State of the art of integrated optics technology at LETI for achieving passive optical components. Journal of Modern Optics, 1988,35(6):993~1005
  • 5[5]Kawachi M, Yasu M, Kobagashi M. Flame hydrolysis deposition of,SiO2-TiO2 Glass planar,optical waveguides on silicon. Jpn J Appl Phys,1983,22(12):1932~1933
  • 6[6]Kawachi M, Yasu M, Edahiro T. Fabrication of SiO2-TiO2 glass planar optical waveguides by flame hydrolysis deposition. Electronics Letters,1983,19(15):583~584
  • 7[7]Kominato T, Ohmori Y, Okazaki H. et al. Very low-loss GeO2-doped silica waveguides fabricated by flame hydrolysis deposition method. Electronic Letters,1990,26:327~328

共引文献3

同被引文献28

引证文献5

二级引证文献3

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部