摘要
Domain walls/boundaries in ferroic materials usuallyexhibit properties which do not exist in their bulks （e.g.,superconducting, piezoelectricity, etc.） [1,2]. Ferroelectricdomain walls with a size of several nanometers displayexotic conduction [3-5] among their insulating bulk. Dueto its electric-field controllable nature, ferroelectric/mul-tiferroic domain walls could be a promising candidate forhigh-density data storage or logic devices with ultralowenergy consumption.
