摘要
概述了太赫兹（THz）InP技术的优势、应用前景及美国的发展规划。重点对国外THzInP高电子迁移率晶体管（HEMT）和异质结双极晶体管（HBT）的技术进展和突破进行了详细阐述，其中国外HEMT和HBT器件的工作频率都达到了1THZ以上，国外报道的650GHz以上的InP太赫兹单片集成电路（TMIC）很多，包括低噪声放大器和功率放大器等，并且性能优异。介绍了我国THzInP技术的研究现状，国内InPHEMT和HBT器件的工作频率最高可达600GHz，电路的工作频率在300GHZ左右。最后，对国内外的最新技术水平进行了对比，并在对比的基础上针对存在的问题提出了我国在THzInP领域的发展建议。
Advantages and application prospects of the teraherta （THz） InP technology and its development programs in the United States are introduced briefly. Development status and break- throughs of the THz InP high electron mobility transistor （HEMT） and heterojunction bipolar transistor （HBT） technologies in foreign countries are illustrated in detail. The working fre- quencies of the HEMT and HBT devices are above 1 THz, and many InP THz monolithic inte- grated circuits （TMICs） above 650 GHz are reported in foreign countries, including low noise amplifiers and power amplifiers, and these devices have excellent properties. The domestic re- search status of the THz InP technology is introduced. The working frequencies of the InP HEMT and HBT devices are up to 600 GHz, while the working frequencies of the corresponding circuits are about 300 GHz. Finally, the latest technology progresses at home and abroad are compared, and development suggestions for the THz InP technology in our country are presen- ted.
作者
王淑华
Wang Shuhua(The 13th Research Institute, CETC, Shijiazhuang 050051, China)
出处
《微纳电子技术》
北大核心
2018年第6期381-387,421,共8页
Micronanoelectronic Technology
