SOI高温压阻式压力传感器的设计与制备

Design and Preparation of a High Temperature SOI Piezoresistive Pressure Sensor

设计并制备了一种基于绝缘体上硅（SOI）材料、量程为5Pa～1．8MPa的压阻式压力传感器。在设计方面，通过有限元分析软件和经典理论相结合分析敏感膜片的力学性能和电学性能，得到敏感膜片的尺寸和表面电势的分布；在工艺方面，设计了基于标准微电子机械系统（MEMS）工艺的制作流程；在芯片的封装方面，为保证敏感芯片与外界的电气互连，采用了引线键合工艺，同时装配温度补偿电路和信号调理电路降低了传感器的温漂，保证传感器的输出。制备后的压力传感器在温度压力复合平台进行标定和温度测试，结果显示传感器在设计量程范围内具有较好的精度并且可在-50-205℃内稳定工作。

A kind of piezoresistive pressure sensor with a range of 5 Pa- 1.8 MPa was designed and prepared based on the silicon-on-insulator （SOI） material. In the aspect of design, the mechanical and electrical properties of the sensitive diaphragm were analyzed by combining the finite element analysis software and classical theory, and the size of the sensitive diaphragm and the distribution of the surface potential were obtained. In the aspect of technology, the production process based on the standard micro-electromechanical system （MEMS） technology was de- signed. In the aspect of chip packaging, the wire bonding process was used to ensure the electri- cal interconnection between the sensitive chip and peripheral. Meanwhile, the temperature com- pensation circuit and signal conditioning circuit were assembled to reduce the temperature drift of the sensor and ensure the output of the sensor. The calibration and temperature testing of the fabricated pressure sensor were carried out in the temperature-pressure composite platform. The results show that the sensor has good precision in the design range and works steadily in the range of - 50- 205 ℃.