摘要
This paper presents an asymmetric anode structure and cathode extraction fast and soft recovery diode.The device anode is partial-heavily doped and partial-lightly doped.Theregion is introduced into the cathode.Firstly,the characteristics of the diode are simulated and analyzed.Secondly,the diode was fabricated and its characteristics were tested.The experimental results are in good agreement with the simulation results.The results show that,compared with the P–i–N diode,although the forward conduction characteristic of the diode is declined,the reverse recovery peak current is reduced by 47%,the reverse recovery time is shortened by 20%and the softness factor is doubled.In addition,the breakdown voltage is increased by 10%.
This paper presents an asymmetric anode structure and cathode extraction fast and soft recovery diode.The device anode is partial-heavily doped and partial-lightly doped.Theregion is introduced into the cathode.Firstly,the characteristics of the diode are simulated and analyzed.Secondly,the diode was fabricated and its characteristics were tested.The experimental results are in good agreement with the simulation results.The results show that,compared with the P–i–N diode,although the forward conduction characteristic of the diode is declined,the reverse recovery peak current is reduced by 47%,the reverse recovery time is shortened by 20%and the softness factor is doubled.In addition,the breakdown voltage is increased by 10%.
基金
Project supported by the National Natural Science Foundation of China(No.51177133)
