摘要
分析了谐波控制理论提高功放效率的原理。对南京电子器件研究所的GaN HEMT器件进行了负载牵引测试。根据测试结果发现,通过谐波控制可以有效提升该器件的效率,在8GHz时能获得10%的效率提升。应用谐波控制理论设计了一款X波段单级MMIC功放。经连续波测试,该功放芯片在8.6~9.5GHz范围内漏极效率达到48%~56%。
The principle of harmonic control theory in RF power amplifier was analyzed.Load-pull test was performed on the GaN HEMT RF power amplifier from Nanjing Electronic Devices Institute.It is shown that the efficiency of the amplifier can be effectively improved by the employment of the harmonic control technique.For example,it is found that the drain efficiency can be increased by 10%for an amplifier operated at 8 GHz.An X-band single stage MMIC power amplifier was designed by using harmonic control technique.The result shows the drain efficiency of the amplifier reaches up to 48%~56%in the range of 8.6~9.5 GHz.
作者
王嘉文
陶洪琪
WANG Jiawen;TAO Hongqi(Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing, 210016)
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2018年第2期101-105,共5页
Research & Progress of SSE
