具有宽安全工作区的压接式IGBT芯片研制

The Research on IGBT Chip with Wide SOA for Press-pack

针对柔性直流输电关键装备高压直流断路器的特殊需求,基于现有工艺平台开发了一款宽安全工作区的3 300V/50A压接式IGBT芯片。为降低2~4 ms过电流冲击过程中的芯片温升,纵向采用非穿通结构。同时,采用阶梯栅氧结构,引入第二雪崩区,降低动态闩锁发生的风险,提高器件的安全工作区。为适用于压接封装,开发了厚金属电极工艺,实现对压力的缓冲。将此结构流片验证,并进行模块级测试,芯片可在1 800V电压下达到6.5倍以上额定电流安全关断,短路电流可在20μs内安全关断,具有宽安全工作区水平。

According to the special requirements of the high voltage direct current（HVDC）breaker for flexible high voltage direct current transmission,a 3300 V/50 AIGBT chip with wide safe operating area was developed based on the available manufacturing platform.In order to reduce the temperature increase of the chip caused by the over-current impact within 2~4 ms,a non-punch-through（NPT）structure was adopted.Using step structural gate oxide,the second avalanche zone was introduced to reduce the risk of dynamic latch-up and improve the safe operating area.Thick metal electrode process was developed to buffer the pressure and to facilitate press-pack.The test results show that the IGBT chip has wide reverse biased safe operating area（RBSOA）with high turn-off capability larger than 6.5 xIcunder 18 00 Vand wide short circuit safe operating area（SCSOA）which can sustain 20μs.