期刊文献+

Er^(3+)和Eu^(3+)共注入GaN的光学特性和能量传递机制 被引量:2

Optical Properties and Energy Transfer Mechanism in Er^(3+) and Eu^(3+) Co-doped GaN Films
下载PDF
导出
摘要 采用离子注入法在GaN薄膜中实现了Er^(3+)和Eu^(3+)离子的共掺杂.以阴极荧光光谱仪为主要表征手段,研究样品的光学特性和能量传递机理.在300K温度下,Er^(3+)和Eu^(3+)共掺杂GaN薄膜能够实现绿光和红光的同时发射.随着Er^(3+)离子掺杂剂量的增加,Eu^(3+)离子相关发光峰的强度减弱,Er^(3+)离子对应的两个相关发光峰强度比值减小,表明Er^(3+)和Eu^(3+)离子之间发生了能量传递,能量传递的方向为Eu^(3+)→Er^(3+).变温阴极荧光光谱显示,Er^(3+)离子的2H11/2和4S3/2两个能态相关的跃迁峰相对强度比值随着温度升高而降低,主要是由两个能级之间的热耦合导致.改变Er^(3+)离子的掺杂剂量,能够调控GaN:Er^(3+)/Eu^(3+)样品的光学色度坐标和色温,表明此材料可用于发光器件. The samples of Er^3+and Eu^3+co-doped GaN epitaxial films were prepared by ion implantation technique. Their optical properties and energy transfer mechanism were investigated using cathodoluminescence.For Er^3+and Eu^3+co-doped GaN films sample,the mixed color of green and red light can be realized at 300 K.Moreover,the emission intensity of Eu^3+ions and intensity ratio of Er^3+ions were decreased with the increase of Er^3+ions implantation dose,which proved the existence of the energy transfer from Eu^3+to Er^3+in the GaN host. The result of temperature-dependent cathodoluminescence spectra shows that the intensity ratio is decreased with the temperature increasing,which indicates there is a thermal coupling of 2 H11/2 and 4 S3/2 states of Er^3+ions.The calculated chromaticity coordinates and color correlated temperature can be tuned through adjusting the implantation dose ratio of Er^3+to Eu^3+.This work shows Er^3+and Eu^3+co-doped GaN films are promising materials applied in optical devices.
作者 夏永禄 王晓丹 曾雄辉 王建峰 赵岳 徐科 XIA Yong-lu;WANG Xiao-dan;ZENG Xiong-hui;WANG Jian-feng;ZHAO Yue;XU Ke(School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China;Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, J iangsu 215123, China;Department of Physics, Suzhou University of Science and Technology, Suzhou, J iangsu 215009, China)
出处 《光子学报》 EI CAS CSCD 北大核心 2018年第5期38-43,共6页 Acta Photonica Sinica
基金 国家自然科学基金(Nos.61306004 51002179)资助~~
关键词 光电子学 GAN 阴极荧光 光学特性 能量传递 Optoelectronics GaN Cathodoluminescence Optical properties Energy transfer
  • 相关文献

参考文献4

二级参考文献39

  • 1颜国君,陈光德,邱复生,Zhaoyan Fan.氮化铝薄膜的光学性能[J].光子学报,2006,35(2):221-223. 被引量:11
  • 2吕惠民,陈光德,耶红刚,颜国君.六方单晶氮化铝薄膜的合成与紫光发光机理[J].光子学报,2007,36(9):1687-1690. 被引量:5
  • 3HOMMERICH U, NYEIN E E, LEE D S, et al. Photoluminescence studies of rare earth (Er, Eu, Tm) in situ doped GaN. Appl. Phys. Lett., 2003, 105(3): 91–96.
  • 4RUTERANA P, LACROIX B, LORENZ K, et al. A mechanism for damage formation in GaN during rare earth implantation at medium range energy and room temperature. Journal of Applied Physics, 2011, 109(1): 013506.
  • 5WANG C M, JIANG W, WEBER W J. Defect clustering in GaN irradiated with O+ ions. Journal of Materials Research, 2002, 17(11): 2945–2952.
  • 6LECLERC S, LACROIX B, DECLEMY A, et al. Mechanisms of damage formation in Eu-implanted AlN. Journal of Applied Physics, 2012, 112(7): 073525.
  • 7PIERRE RUTERANA, MARIE-PIERRE CHAUVANT, KATHARINA LORENZ. Mechanisms of damage formation during rare earth ion implantation in nitride semiconductors. Japanese Journal of Applied Physics, 2013, 52(11): UNSP 11NH02.
  • 8SOARES M J, LEIT?O J P, SLIVA, et al. Structural and optical properties of Er implanted AlN thin ?lms: green and infrared photoluminescence at room temperature. Optical Materials, 2011, 33(7): 1055–1058.
  • 9LORENZ K E, ALVES T, MONTEIRO, et al. Optical doping of AlN by rare earth implantation. Nuclear Instruments and Methods in Physics Research B, 2006, 224(1/2): 307–310.
  • 10LU F, RIZZI A, CARIUS R. Lattice disorder and photoluminescence of Er-implanted AlN crystalline films. Chinese Physcics Letter, 2002, 19(12): 1844–1847.

共引文献6

同被引文献6

引证文献2

二级引证文献10

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部