摘要
采用离子注入法在GaN薄膜中实现了Er^(3+)和Eu^(3+)离子的共掺杂.以阴极荧光光谱仪为主要表征手段,研究样品的光学特性和能量传递机理.在300K温度下,Er^(3+)和Eu^(3+)共掺杂GaN薄膜能够实现绿光和红光的同时发射.随着Er^(3+)离子掺杂剂量的增加,Eu^(3+)离子相关发光峰的强度减弱,Er^(3+)离子对应的两个相关发光峰强度比值减小,表明Er^(3+)和Eu^(3+)离子之间发生了能量传递,能量传递的方向为Eu^(3+)→Er^(3+).变温阴极荧光光谱显示,Er^(3+)离子的2H11/2和4S3/2两个能态相关的跃迁峰相对强度比值随着温度升高而降低,主要是由两个能级之间的热耦合导致.改变Er^(3+)离子的掺杂剂量,能够调控GaN:Er^(3+)/Eu^(3+)样品的光学色度坐标和色温,表明此材料可用于发光器件.
The samples of Er^3+and Eu^3+co-doped GaN epitaxial films were prepared by ion implantation technique. Their optical properties and energy transfer mechanism were investigated using cathodoluminescence.For Er^3+and Eu^3+co-doped GaN films sample,the mixed color of green and red light can be realized at 300 K.Moreover,the emission intensity of Eu^3+ions and intensity ratio of Er^3+ions were decreased with the increase of Er^3+ions implantation dose,which proved the existence of the energy transfer from Eu^3+to Er^3+in the GaN host. The result of temperature-dependent cathodoluminescence spectra shows that the intensity ratio is decreased with the temperature increasing,which indicates there is a thermal coupling of 2 H11/2 and 4 S3/2 states of Er^3+ions.The calculated chromaticity coordinates and color correlated temperature can be tuned through adjusting the implantation dose ratio of Er^3+to Eu^3+.This work shows Er^3+and Eu^3+co-doped GaN films are promising materials applied in optical devices.
作者
夏永禄
王晓丹
曾雄辉
王建峰
赵岳
徐科
XIA Yong-lu;WANG Xiao-dan;ZENG Xiong-hui;WANG Jian-feng;ZHAO Yue;XU Ke(School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China;Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, J iangsu 215123, China;Department of Physics, Suzhou University of Science and Technology, Suzhou, J iangsu 215009, China)
出处
《光子学报》
EI
CAS
CSCD
北大核心
2018年第5期38-43,共6页
Acta Photonica Sinica
基金
国家自然科学基金(Nos.61306004
51002179)资助~~
关键词
光电子学
GAN
阴极荧光
光学特性
能量传递
Optoelectronics
GaN
Cathodoluminescence
Optical properties
Energy transfer