摘要
随着集成电路的集成度不断提高,化学机械平坦化(CMP)后清洗在半导体工艺中显得尤为重要。本文介绍了一种自主研发的新型碱性清洗液,其主要成分为FA/OII型螯合剂和O-20非离子表面活性剂。FA/OII型螯合剂是一种有机胺碱,不仅能调节p H值,还能在CMP条件下与表面生成的Cu O和Cu(OH)_x发生反应生成稳定可溶的络合物,同时使化学吸附在表面的Si O_2随着氧化物或氢氧化物的脱落而脱离表面;O-20活性剂的表面张力较低,容易在晶圆表面铺展,将物理吸附在表面的颗粒托起,被清洗液带走。通过一系列对比试验得出,当清洗液中FA/OII型螯合剂的体积分数为0.015%,表面活性剂的体积分数为0.25%时,晶圆表面的颗粒数由抛光后的3200降到611,而且表面粗糙度较低,为1.06 nm,没有腐蚀现象。
With the integration of integrated circuits improving continuously, the cleaning after chemical planarization （CMP） is particularly important in semiconductor technology. This paper introduces a kind of novel FA/O alkaline cleaning solutions. Its main ingredients include FA/OII chelating agent and O-20 non-ionic surfactant. FA/OII chelating agent is a kind of organic amine alkali. It not only adjusts the pH value, but also reacts with the CuO and Cu（OH）x and generates stable complex compound. At the same time, the SiO2 adsorbed chemically will be divorced from the surface with the CuO and Cu（OH）x. The surface tension of O-20 non-ionic surfactant is low and easy to spread on the surface. The particles adsorbed physically will be held up and taken away by cleaning solutions. Through a series of contrast experiments, when the volume fraction of FA/OII chelating agent is 0.015%, and the volume fraction of surfactant is 0.25%, the number of particles on the surface of the wafer is reduced from 3200 to 611, and the surface roughness is 1.06 nm, there is no corrosion phenomena.
作者
杨柳
刘玉岭
檀柏梅
高宝红
刘宜霖
YANG Liu1,2, LIU Yuling1,2, TAN Baimei1,2, GAO Baohong1,2, LIU Yilin1,2(1. School of Electronic Information Engineering, Hebei University of Technology,Tianjin 300130, China; 2. Tianjin Key Laboratory of Electronic Materials and Devices, Tianjin 300130, Chin)
出处
《电子元件与材料》
CAS
CSCD
北大核心
2018年第5期95-99,105,共6页
Electronic Components And Materials
基金
国家中长期科技发展规划02科技重大专项资助项目(2016ZX02301003-004-007)
国家自然科学基金资助项目(NSFC61504037)
河北省博士后择优资助项目(B2015003010)
