摘要
All-inorganic cesium lead halide perovskites （CsPbX3, X=CF, Br-, I-） could provide comparableoptoelectronic properties as a promising class of materials for photovoltaic cell （PV）, photodetector andlight-emitting diode （LED） with enhanced thermal and moisture stabilities compared to organic-inorganic lead halide species. However, fabrication of CsPbI3 perovskite via facile solution process hasbeen difficult due to instability of CsPbl3 in the perovskite cubic phase in ambient air. Herein, we reportthe synthesis of CsPbl3 perovskite microcrystals by low-temperature, catalyst-free, solution-phasemethod. By applying the time-resolve spectroscopic technique, we determine the carrier diffusioncoefficient of 0.6-1.2 cm2/s, the intrinsic carrier lifetimes of 200-1300 ns and diffusion length of4-10 μm in different individual CsPbl3 perovskite microcrystals. Our results suggest the CsPbl3 perovskitemicrocrystals synthesized by solution process exhibit high quality feature and are suitable forapplications in optoelectronic devices.
All-inorganic cesium lead halide perovskites （CsPbX3, X=CF, Br-, I-） could provide comparableoptoelectronic properties as a promising class of materials for photovoltaic cell （PV）, photodetector andlight-emitting diode （LED） with enhanced thermal and moisture stabilities compared to organic-inorganic lead halide species. However, fabrication of CsPbI3 perovskite via facile solution process hasbeen difficult due to instability of CsPbl3 in the perovskite cubic phase in ambient air. Herein, we reportthe synthesis of CsPbl3 perovskite microcrystals by low-temperature, catalyst-free, solution-phasemethod. By applying the time-resolve spectroscopic technique, we determine the carrier diffusioncoefficient of 0.6-1.2 cm2/s, the intrinsic carrier lifetimes of 200-1300 ns and diffusion length of4-10 μm in different individual CsPbl3 perovskite microcrystals. Our results suggest the CsPbl3 perovskitemicrocrystals synthesized by solution process exhibit high quality feature and are suitable forapplications in optoelectronic devices.
基金
the financial support from the National Natural Science Foundation of China(No.21473192)
the financial support from the National Natural Science Foundation of China(Nos.21373042 and 21677029)
