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中高压大功率IGBT数字有源门极开环分级驱动技术 被引量:6

Open-Loop Hierarchical Control Technology of High-Power IGBT Digital Active Gate Drive
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摘要 在中高压、大容量电力电子变流系统中,大功率绝缘栅双极晶体管(IGBT)是变流器的关键器件,而门极驱动技术是影响IGBT功率器件及其组成的变流系统发挥最优性能的关键因素。首先,对IGBT门极驱动控制技术进行理论分析,确定开环分级点;其次,给出基于FPGA的数字有源门极开环分级驱动器具体实现电路;最后,基于设计的数字驱动器和Concept驱动器进行对比实验,结果表明在不恶化其他参数(反向恢复电流、关断电压尖峰、diC/dt、dvCE/dt)下,所研究的数字分级驱动器可减少开通关断延时。 The high-power IGBT is a key component in the medium-high voltage and large-capacity power electronic converter system, while the gate drive technology is a critical factor influencing the performance of IGBT devices and converter system. This paper theoretically analyzed the IGBT gate drive control technology, proposed an open-loop hierarchical drive scheme, and designed a specific digital drive circuit based on the FPGA. The comparisons of the designed driver with the Concept driver through experiments show that the designed driver can effectively reduce switching delay time without degrading other parameters(reverse recovery current, turn-off overvoltage, diC/dt, dvCE/dt).
作者 胡亮灯 肖明恺 楼徐杰 Hu Liangdeng;Xiao Mingkai;Lou Xujie(National Key Laboratory of Science and Technology on Vessel Integrated Power System Naval University of Engineering Wuhan 430033 Chin)
出处 《电工技术学报》 EI CSCD 北大核心 2018年第10期2365-2375,共11页 Transactions of China Electrotechnical Society
基金 国家自然科学基金(51177170 51477180 51377167) 国家重点基础研究发展计划(973计划)(2015CB251004)资助项目
关键词 大功率IGBT 数字驱动器 开环 分级 High-power insulation gate bipolar transistor digital hierarchical drive open-loop hierarchical
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  • 1孟进,马伟明,张磊,赵治华.基于IGBT开关暂态过程建模的功率变流器电磁干扰频谱估计[J].中国电机工程学报,2005,25(20):16-20. 被引量:52
  • 2Ruthing H, Umbach F, Hellmund O, et al. 600V- IGBT3: trench field stop technology in 70pm ultra thin wafer technology[C]. ISPSD, Cambridge, UK, 2003: 63-66.
  • 3Sheng Kuang, Williams B W, Finney S J. A review of IGBT models[J]. IEEE Transactions on Power Electronics, 2000, 15(6): 1250-1266.
  • 4Hefner A R, Bouche S. Automated parameter extraction software for advanced IGBT modeling[C]. Proc. of IEEE Workshop on Computers, Blacksburg, July, 2000: 10-18.
  • 5Kang X, Santi E, Hudgins J L, et al. Parameter extraction for a physics-based circuit simulator IGBT model[C]. Proc . IEEE Applied Power Electronics Conf., (APEC'03), 2003: 946-952.
  • 6Angus T Bryant, Kang Xiaosong, Enrico Santi, et al. Two-step parameter extraction procedure with formal optimization for physics-based circuit simulator IGBT and p-i-n diode models[J]. IEEE Transactions on Power Electronics, 2006, 21( 2): 295-308.
  • 7Udrea F, Amaratuniga G A. Theorical and numerical comparison between DMOS and trench technologies for insulated gate bipolar transistors[J]. IEEE Transaction on Electron Devices, 1995, 42(7): 1356- 1366.
  • 8Hefner A R. Modeling buffer layer IGBT's for circuit simulation[J]. IEEE Transactions on Power Electronics, 1995, 10(2): 111-123.
  • 9Hefner A R, Blackburn D L. An analytical model for the steady-state and transient characteristics of the power insulated gate bipolar transistor[J]. Solid State Electronics, 1988, 31(10): 1513 -1532.
  • 10Hefner A R, Blackburn D L. An analytical model for the steady-state and transient characteristics of the power insulate gate bipolar transistor[J]. Solid-State Electronics, 1988, 31(10): 1513-1532.

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