摘要
Electron-impact single ionization cross sections for W^q＋（q = 4–5） were calculated using the flexible atomic code（FAC） in the level-to-level distorted-wave method, considering the explicit branching ratio. The calculated cross sections are compared with the available theoretical and experiment results in detail. In the case of the contribution from the same channles as the available theoretical results, all of the calculated ionization cross sections agree with the experimental measured cross sections. But the present calculated results are larger than the experimental measurement when all channels contributions are included. Some important channels excitation autoionization（EA） contributions, such as the excitation to higher higher nl subshell from 4 f and 5[s,p], were not included into the available theoretical calculation. In general, the distorted-wave（DW） results are overestimated.
Electron-impact single ionization cross sections for W^q＋（q = 4–5） were calculated using the flexible atomic code（FAC） in the level-to-level distorted-wave method, considering the explicit branching ratio. The calculated cross sections are compared with the available theoretical and experiment results in detail. In the case of the contribution from the same channles as the available theoretical results, all of the calculated ionization cross sections agree with the experimental measured cross sections. But the present calculated results are larger than the experimental measurement when all channels contributions are included. Some important channels excitation autoionization（EA） contributions, such as the excitation to higher higher nl subshell from 4 f and 5[s,p], were not included into the available theoretical calculation. In general, the distorted-wave（DW） results are overestimated.
作者
张登红
颉录有
蒋军
武中文
董晨钟
师应龙
屈一至
Denghong Zhang1, Luyou Xie1, Jun Jiang1, Zhongwen Wu1, Chenzhong Dong1, Yinglong Shi2, and Yizhi Qu3(1 Key Laboratory of Atomic and Molecular Physics ＆ Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China;2Department of physics, Tianshui Normal University, Tianshui 741000, China;3 College of Material Sciences and Opto-electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, Chin)
基金
Project supported by the National Natural Science Foundation of China(Grant Nos.2017YFA0402300,11464042,11564036,11774292,and 11464040)
the Basic Scientific Research Foundation for Institution of Higher Learning of Gansu Province,China
