前表面场结构参数对IBC太阳电池电学性能的影响

Influences of front surface field structural parametrs on IBC solar cells' electrical performance

利用TCAD半导体器件仿真软件详细地分析了前表面场(FSF)表面浓度及扩散深度对N型插指背接触(IBC)太阳电池电学性能的影响。分析和评价了在不同的前表面复合速率(FSRV)、发射区覆盖比例(FE)及衬底电阻率(ρ)情况下,用FSF结构改善IBC太阳电池电学性能的效果,并给出了在各种情况下优化的FSF结构参数。仿真结果表明:IBC太阳电池FSF结构具有改善电池电学性能的作用。在不同的前表面复合速率、发射区覆盖比例及衬底电阻率情况下,前表面场结构对IBC太阳电池电学性能的改善效果不同。在较高的前表面复合速率情况和较低的发射区覆盖比例情况下,前表面场对电池电学性能的改善效果更加显著,对于较高的衬底电阻率情况,前表面场对电池电学性能的改善效果略优于较低的衬底电阻率情况。

The influences of front surface field（ FSF） ＇s surface concentration and diffusion depth on N-type interdigitated back contact（ IBC） mono-crystalline silicon solar cells＇ electrical properties are studied in detail by using the TCAD semiconductor device simulation software. The effect of improving IBC solar cells＇ electrical properties by using FSF structures is analyzed and evaluated under different conditions of surface recombination rate,emitter area coverage ratio and substrate resistivity,and the optimal FSF structural parameters are given under different conditions. The simulation results show that IBC solar cells＇ FSF structure improves solar cells＇ electrical performance.The effect of FSF structure＇s improving IBC solar cells＇ electrical properties is different under different surface recombination rate,emitter area coverage ratio and substrate resistivity. The improvement effect is more significant under higher front surface recombination rate and lower emitter area coverage ratio. Under the lower substrate resistivity,the effect of improvement of front surface field structure on the electrical propertie is slightly better than that under higher substrate resistivity.