氮掺杂多壁碳纳米管的制备及其电化学性能

Preparation and electrochemical performance of nitrogen-doped multi-walled carbon nanotubes

采用原位聚合法制备了由4-氨基二苯胺修饰的多壁碳纳米管,之后将其高温炭化制备了氮掺杂多壁碳纳米管。结果表明:掺杂后的碳纳米管氮含量由未掺杂前的0增加到3.89%,且在0.5 A/g时比电容为150 F/g,是未掺杂碳纳米管电容值的3倍,这归因于氮元素掺杂贡献的优异的表面润湿性和赝电容性能。

The carbon nanotubes were modified with 4-amino diphenyl ammonia by in situ polymerization, and nitrogen-doped multi-walled carbon nanotubes（N-CNTs） were prepared by high temperature carbonization. The results show that the nitrogen content of N-CNTs increases from 0 to 3.89%. The specific capacitance of N-CNTs is150 F/g at the current density of 0.5 A/g, which is 3 times specific capacitance of CNTs. It＇s attributed to the excellent surface wettability and pseudocapacitance due to nitrogen doping.