摘要
采用固相反应烧结方法制备了Sm掺杂的[(Na_(0.5)Bi_(0.5))_(0.93)Ba_(0.07)]_(1-x)Sm_xTiO_3(BNBST)无铅介电储能陶瓷,系统研究了Sm掺杂含量对BNBST陶瓷的相结构、微观结构、铁电、介电、储能和交、直流电导的影响。研究结果表明:制备的陶瓷样品具有单一的钙钛矿结构,Sm掺杂固溶于(Na_(0.5)Bi_(0.5))_(0.93)Ba_(0.07)TiO_3基材的晶格A位;晶粒生长被Sm掺杂抑制,平均晶粒尺寸在2μm内,且均匀致密;Sm掺杂显著降低了剩余极化和矫顽场,表现出双电滞回线特性,但饱和极化也略有降低;储能密度和效率随Sm掺杂量增加先增大后减小,在x=0.02和电场为70 kV/cm时获得最大储能密度0.70 J/cm^3,其效率为40%;BNBST陶瓷具有明显的弛豫铁电体特征,其介电常数峰Tm随掺杂量增加而降低且平坦化;BNBST陶瓷的绝缘性有较强的温度依赖性,300℃以下具有良好的绝缘性。
Sm doped [（Na（0.5）Bi（0.5））（0.93）Ba（0.07）]（1-x）SmxTiO3（BNBST） lead-free dielectric energy storage ceramics were prepared by solid-phase reaction sintering method.Effects of the Sm doping content on phase structure,microstructure,ferroelectric,dielectric,energy storage properties and d.c.,and a.c.conductance of BNBST ceramics were systematically investigated.Results indicate that the as-fabricated BNBST ceramics exhibit single-phase perovskite structure,and Sm dopants get into the A-site lattice of（Na（0.5）Bi（0.5））（0.93）Ba（0.07）TiO3 matrix.Dense and uniform grains are obtained by grain growth inhibition of Sm dopants with average grain size within 2 μm.The remanent polarization and coercivity of BNBST ceramics sharply decrease after introducing Sm dopants,and the double hysteresis loops are observed with a little decrease of saturation polarization.The energy storage density and efficiency increase firstly and then decrease with increasing Sm doping content,the energy storage density reaches a maximum value of 0.70 J/cm-3 at x=0.02 and 70 kV/cm electric field,with corresponding efficiency of 40%.The BNBST ceramics show an obvious relaxation ferroelectric characteristic and its dielectric constant peaks of Tm decrease and planarize with increasing Sm doping content.The electric insulativity of BNBST ceramics has strong temperature dependence,and the excellent electric insulativity can be kept when ambient temperature is below 300℃.
作者
窦闰镨
卢晓鹏
杨玲
王华
周昌荣
许积文
DOU Run-Pu, LU Xiao-Peng1, YANG Ling1,2, WANG Hua1,2, ZHOU Chang-Rong1,2, XU Ji-Wen1,2(1. School of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, China; 2. Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, Guilin 541004, Chin)
出处
《无机材料学报》
SCIE
EI
CAS
CSCD
北大核心
2018年第5期528-534,共7页
Journal of Inorganic Materials
基金
国基自然科学基金(11664006)
广西自然科学基金(2016GXNSFAA380069)~~
