InAs/GaSb超晶格长波红外探测器

Long-wavelength Super Lattice Infrared Detectors Based on InAs/GaSb

InAs/GaSb Ⅱ类超晶格红外探测器因其特殊的能带结构及其自身的材料和器件优势,在红外成像技术上具备极大的应用价值和前景,同时在大面阵长波红外探测器及甚长波红外探测器领域展现出优异的器件性能,并推动世界各国对这一低维半导体研究的持续发展,成为第三代红外探测器技术的最佳选择,并在国防建设、医疗、电力、天文学、抗灾方面有着广泛的应用。本文着重介绍了Ⅱ类超晶格长波红外探测器器件的制备、焦平面的成像测试以及器件的相关性能。长波探测器器件在77 K条件下10%截止波长为14mm,峰值量子效率为35%,峰值响应2.6 A/W,峰值探测率接近1×1010cm Hz1/2W^(-1)。

InAs/GaSb type-Ⅱ superlattices have been shown to be important as third-generation infrared detectors. This is because of their special structure, excellent material properties and excellent device performance as large array long wavelength infrared detectors（LWIR） and very-long wavelength infrared detectors（VLWIR）.In addition, they have demonstrated the best application value and prospect in infrared imaging technology, thereby encouraging continued research into this low dimensional semiconductor. It has comprehensive applications in national defense, medical treatment, power, astronomy and fight natural calamities. The preparation of the device, imaging test of the focal plane array and the relevant performance is presented. The 10% cutoff wavelength of the long wavelength infrared detectors device is 14 mm. The final peak quantum efficiency（QE） is 35% and the peak responsivity is 2.6 A/W with an average detectivity of 1×1010 cm？Hz1/2？W^（-1）.