一种适用于NAND型Flash存储器译码故障检测的改进对角线算法

An Improved Diagonal Algorithm for NAND Flash Memory's Decoder Fault Detection

为保证有故障的进口低等级NAND型Flash存储器在装机前的二次筛选环节能够被准确剔除,以存储器的存储阵列结构分析为出发点,结合NAND结构的实际特征,以三星公司生产的K9F2G08U0A-PCB0/PIB0商业级Flash芯片为研究对象,对现有的用于测试存储器译码故障的对角线算法进行改进,并通过总剂量试验使存储器产生部分坏块来验证改进算法的有效性。结果表明,改进后的对角线算法能够很好地检测出存储器的译码故障,解决了原有对角线算法不适用于NAND型Flash存储器译码故障检测的问题。

In order to reject the imported low quality level NAND flash memory device with trouble correctly before usage, based on the analysis of memory array structure and NAND structure＇s characteristic, an improved diagonal algorithm is proposed to detect the decoder fault, which is verified by the chip K9 F2 G08 U0 A-PCB0/PIB0 of Samsung. A total-ionizingdose experiment is designed to test the algorithm＇s effectiveness. The result shows that the improved diagonal algorithm can well detect the NAND flash memory＇s decoder fault.