1.3 μm InAs/GaAs quantum dot lasers on silicon with GaInP upper cladding layers

We report on the first electrically pumped continuous-wave(CW) In As/Ga As quantum dot(QD) laser grown on Si with a GaInP upper cladding layer. A QD laser structure with a Ga_(0.51)In_(0.49)P upper cladding layer and an Al_(0.53)Ga_(0.47)As lower cladding layer was directly grown on Si by metal–organic chemical vapor deposition. It demonstrates the postgrowth annealing effect on the QDs was relieved enough with the GaInP upper cladding layer grown at a low temperature of 550°C. Broad-stripe edge-emitting lasers with 2-mm cavity length and 15-μm stripe width were fabricated and characterized. Under CW operation, room-temperature lasing at ~1.3 μm has been achieved with a threshold density of 737 A∕cm^2 and a single-facet output power of 21.8 mW.

We report on the first electrically pumped continuous-wave （CW） InAs/GaAs quantum dot （QD） laser grown on Si with a GaInP upper cladding layer. A QD laser structure with a Ga0.51In0.49P upper cladding layer and an Al0.53Ga0.47As lower cladding layer was directly grown on Si by metal-organic chemical vapor deposition. It demonstrates the postgrowth annealing effect on the QDs was relieved enough with the GaInP upper layer grown at a low temperature stripe width were fabricated and been achieved with a threshold Chinese Laser Press cladding of 550℃. Broad-stripe edge-emitting lasers with 2-ram cavity length and 15-μm characterized. Under CW density of 737 A/cm2 and operation, room-temperature lasing at-1.3 μm has a single-facet output power of 21.8 mW.