基于低功耗增强型In_(0.25)Ga_(0.75)As沟道MOSFET器件

An enhancement-mode In_(0.25)Ga_(0.75)As MOSFET for low power application

为了实现低功耗的应用,设计了一种增强型InGaAs沟道MOSFET器件,通过改变InGaAs沟道中的In组分和器件掺杂层中的P型掺杂浓度,对器件的Ⅰ-Ⅴ特性进行了模拟仿真和分析。实验结果表明:8μm栅长的增强型InGaAs沟道MOSFET器件的关态电流小于1×10^(-8) mA/mm,器件的开关比达到9个量级,说明了降低InGaAs沟道的In组分和提高InAlAs掺杂层中的P型掺杂浓度能够降低器件的关态电流,增大器件电流开关比,从而实现了低功耗的器件性能。

An enhancement-mode In0.25Ga0.75As channel metal-oxide-semiconductor field-effect transistors（MOSFETs）is designed for low power application.In order to gain high performance,Ⅰ-Ⅴcharacteristics have been simulated and investigated by controlling indium component of InGaAs channel and P-type doping concentration in doping barrier layer.Experimental results shows that an off-state current which is less than 1×10^-8 mA/mm and current switching ratio of 9 orders of magnitude have been achieved in 8 μm gate-length enhancement-mode In0.25Ga0.75As MOSFET.It is shown that the low indium component of InGaAs channel and improving the P-type doping concentration in doping barrier layer can effectively reduce the off-state current of the device and increase current switching ratio,realizing the device performance of low power.