CdS/CuInS_2/In_2S_3量子点太阳能电池的制备与性能

Synthesis and Properties of CdS/CuInS_2/In_2S_3 Quantum Dot-sensitized Solar Cells

连续离子层吸附法(SILAR)是制备量子点最有效的方法之一,本文采用LILAR法制备了CdS/CuInS_2/In_2S_3量子点光阳极,采用SEM、EDS、EIS和吸收光谱对该光阳极的特性进行了表征分析,并研究了其做为量子点敏化太阳能电池(QDSCs)光阳极的电化学特性。结果表明,采用CdS/CuInS_2/In_2S_3量子点的QDSCs较采用CuInS2的QDSCs短路电流、填充因子和光电转换效率,分别提高了97%、46%和226%。

The successive ionic layer adsorption and reaction（SILAR） method is one of the most effective ways for preparing QDs. In this work, SILAR was used to deposit CdS/CuInS2/In2S3 QDs on photo-anodes. The characteristics of photo-anodes were characterized by SEM, EDS, EIS and absorption spectroscopy. The photoelectric performance of QDSCs was measured to study the electrochemical characteristics of photo-anodes. The results showed that the short-circuit current, fill factor and photoelectric conversion efficiency of the CdS/CuInS2/In2S3 QDSCs were 97 %, 46 %, and 226 % higher than the CuInS2 QDSCs, respectively.