半导体硅片CMP后溶液清洗技术的研究进展

Research progress of semiconductor silicon wafers aqueous solution cleaning technology in post-CMP

分析研究了半导体硅片CMP后表面污染机理和清洗的基本理论,综述了CMP后半导体硅片溶液清洗技术的研究进展与现状,并对其发展方向进行了展望。

In this paper,the basic theory is analyzing the surface contamination mechanism of Semiconductor silicon wafers in Post-CMP and its cleaning technology,and summarized the research progress and current situation of Semiconductor silicon wafers through Post-CMP aqueous solution cleaning technology; moreover,the prospect of its development is also discussed.