温度对单晶硅电池光电转化效率的影响

Temperature Effect on Photovoltaic Efficiency of Mono-crystalline Silicon Cell

在真空环境下，分别测量了83．15～353．15K单晶Si光伏电池的电流-电压（I-V）特性曲线，并对相应温度下的开路电压（Voc）、短路电流（Isc）、最大功率点（Pmax）、填充因子（fF）以及光电转化效率（η）进行了分析。通过对不同温度下的数据进行比较，发现Isc随温度升高而升高，平均升高速率为0．0083mA／K，在研究温度区间内总上升幅度为5．83％；Voc随温度升高而降低，平均降低速率为1．8mV／k，在研究温度区间内总下降幅度为20．74％；填充因子以及光电转化效率随温度上升均近似为直线下降，下降速率分别为0．36×10-3/K和0．021％／K，在研究温度区间内总下降幅度分别为9．75％、5．71％。温度升高，光伏电池禁带宽度变窄，在吸收更多光子的同时，载流子的再复合作用也得到增强，二者共同作用使得光伏电池的光电转化效率下降。

The I-Vcharacteristic curve, open circuit voltage （Voc）, short circuit current （Isc） and maximum output power （Pmax） of a mono-crystalline silicon cell were measured in vaccumat 83.15-353.15 K. The photovoltaic efficiency （r/） and fill factor （fF） at different temperatures were calculated. The results show that the Isc is increased by 0.0083 mA/K and the increased rate is 5.83% at 83.15-353.15 K. The Voc is decreased by 1.8 mV/K and the decreased rate is 20.74%. Moreover the fF and Pmax decrease when the cell temperature increases. ThefF is decreased by 0.36×10-3/K and the decreased rate is 9.75%. The Pmax is decreased by 0.021%/K and the decreased rate is 5.71%. As the band gap of silicon decreases with increasing the temperature, the more photons are absorbed and the recombinations are enhanced.