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β-Ga_2O_3纳米线的制备技术及其应用研究进展 被引量:1

Latest Progress in Synthesis and Property Modification and Application of β-Ga_2O_3 Nanowires
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摘要 综述了β-Ga_2O_3纳米线的研究进展,包括纳米线的制备工艺、生长机理、掺杂研究以及催化剂的生长,介绍了β-Ga_2O_3纳米线在日盲探测器和气敏探测器领域的研究现状,讨论了目前存在的难题及以后研究的方向。 The latest advance in deposition, property modification and applications of β-Ga2O3 nanowires was tentatively reviewed. The discussions centered on:i) the growth techniques and mechanisms of β-Ga2O3 nanowires, including but not limited to carbothermal reduction, laser ablation, chemical vapor deposition in vapor-liquid-solid or vapor solid modes, thermal evaporation and RF magnetron sputtering of powder target; ii) the synthesis of β-Ga2O3 nanowires catalyst and impact of dopants, including Pd, In and rare-earth metals on properties modification ; and iii) potential applications in fabrication of photodiodes, solar-blind detectors and gas sensitive detectors. In addition, the existing technical problems, possible solutions and development trends of β-Ga2O3 nanowire array were also briefly discussed in a though provoking way.
作者 张浩 邓金祥 孔乐 李瑞东 潘志伟 白志英 Zhang Hao;Deng Jinxiang;Kong Le;Li Ruidong;Pan Zhiwei;Bai Zhiying(College of Applied Sciences, Belting University of Technology, Beijing 100124, China)
出处 《真空科学与技术学报》 EI CAS CSCD 北大核心 2018年第5期427-433,共7页 Chinese Journal of Vacuum Science and Technology
基金 国家自然科学基金资助项目(60876006 60376007) 北京市教育委员会科技计划重点资助项目(KZ201410005008)
关键词 β-Ga2O3纳米线 生长机理 催化剂 掺杂 探测器 β-Ga2O3 nanowires Growth mechanism Catalyst Doping research Detector
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